The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Jul. 27, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chien-Ning Yao, Hsinchu, TW;
Bo-Feng Young, Taipei, TW;
Sai-Hooi Yeong, Hsinchu County, TW;
Kuan-Lun Cheng, Hsin-Chu, TW;
Chih-Hao Wang, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD, Hsinchu, TW;
Abstract
Fin-like field effect transistors (FinFETs) and methods of fabrication thereof are disclosed herein. The FinFETs disclosed herein have gate air spacers integrated into their gate structures. An exemplary transistor includes a fin and a gate structure disposed over the fin between a first epitaxial source/drain feature and a second epitaxial source/drain feature. The gate structure includes a gate electrode, a gate dielectric, and gate air spacers disposed between the gate dielectric and sidewalls of the gate electrode.