The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Mar. 17, 2021
Applicant:
Advantest Corporation, Tokyo, JP;
Inventors:
Kensuke Okumura, Miyagi, JP;
Tomoo Yamanouchi, Miyagi, JP;
Assignee:
ADVANTEST CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/45 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/452 (2013.01); H01L 29/401 (2013.01); H01L 29/513 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01);
Abstract
Provided is a semiconductor device, including: a compound semiconductor layer; a first insulating film provided on the compound semiconductor layer; a second insulating film, which is formed of a material different from the first insulating film, provided on the first insulating film; and a gate electrode provided above the second insulating film. The first insulating film may include tantalum oxynitride, and the second insulating film may include a material with a larger band gap than tantalum oxynitride. The second insulating film may include aluminum oxynitride.