The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Oct. 04, 2021
Applicant:

Tahoe Research, Ltd., Dublin, IE;

Inventors:

Walid M. Hafez, Portland, OR (US);

Chia-Hong Jan, Portland, OR (US);

Assignee:

Tahoe Research, Ltd., Dublin, IE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/808 (2006.01); H01L 29/8605 (2006.01); H01L 27/098 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 27/098 (2013.01); H01L 29/0657 (2013.01); H01L 29/404 (2013.01); H01L 29/66166 (2013.01); H01L 29/66803 (2013.01); H01L 29/66901 (2013.01); H01L 29/808 (2013.01); H01L 29/8605 (2013.01);
Abstract

A dielectric and isolation lower fin material is described that is useful for fin-based electronics. In some examples, a dielectric layer is on first and second sidewalls of a lower fin. The dielectric layer has a first upper end portion laterally adjacent to the first sidewall of the lower fin and a second upper end portion laterally adjacent to the second sidewall of the lower fin. An isolation material is laterally adjacent to the dielectric layer directly on the first and second sidewalls of the lower fin and a gate electrode is over a top of and laterally adjacent to sidewalls of an upper fin. The gate electrode is over the first and second upper end portions of the dielectric layer and the isolation material.


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