The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Jul. 23, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Chen Zhang, Guilderland, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Xin Miao, San Jose, CA (US);
Wenyu Xu, Albany, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 29/41741 (2013.01); H01L 29/4966 (2013.01); H01L 29/4983 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
A vertical field-effect transistor includes a substrate comprising a semiconductor material; a first set of fins formed from the semiconductor material and extending vertically with respect to the substrate; and a second set of fins extending vertically with respect to the substrate, wherein ones of the second set of fins abut ones of the first set of fins. The second set of fins comprises a dielectric material.