The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Oct. 12, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tung-Jiun Wu, Hsinchu County, TW;
Shun-Yi Lee, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Provided are MIM capacitor and semiconductor structure including MIM capacitor. The MIM capacitor includes a dielectric structure, a bottom electrode on the dielectric structure, a first insulating layer covering the bottom electrode and the dielectric structure, a middle electrode stacked on the bottom electrode, a spacer, a second insulating layer and a top electrode. The middle electrode is separate from the bottom electrode by the first insulating layer therebetween. A bottommost surface of the middle electrode is lower than a top surface of the bottom electrode and higher than a bottom surface of the bottom electrode. The spacer is disposed on the first insulating layer and laterally aside and covers a sidewall of the middle electrode. The second insulating layer covers the middle electrode and the spacer. The top electrode is stacked on the middle electrode and separate from the middle electrode by the second insulating layer therebetween.