The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Oct. 21, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Cheng Yu Huang, Hsinchu, TW;

Chun-Hao Chuang, Hsinchu, TW;

Chien-Hsien Tseng, Hsinchu, TW;

Kazuaki Hashimoto, Zhubei, TW;

Keng-Yu Chou, Kaohsiung, TW;

Wei-Chieh Chiang, Yuanlin Township, TW;

Wen-Hau Wu, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 23/552 (2006.01); H01L 23/64 (2006.01); H01L 25/04 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 23/552 (2013.01); H01L 23/64 (2013.01); H01L 25/043 (2013.01); H01L 27/1469 (2013.01); H01L 27/14621 (2013.01); H01L 27/14629 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01);
Abstract

In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes an image sensor disposed within a first substrate. A first band-pass filter and a second band-pass filter are disposed on the first substrate. A dielectric structure is disposed on the first substrate. The dielectric structure is laterally between the first band-pass filter and the second band-pass filter and laterally abuts the first band-pass filter and the second band-pass filter.


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