The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Jun. 15, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Shigeru Sugioka, Higashihiroshima, JP;

Keizo Kawakita, Higashihiroshima, JP;

Hidenori Yamaguchi, Higashihiroshima, JP;

Bang Ning Hsu, Tainan, TW;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/311 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/31144 (2013.01); H10B 12/31 (2023.02);
Abstract

A semiconductor device includes a semiconductor substrate; and a multilevel wiring structure on the semiconductor substrate, the multilevel wiring structure including at least an intermediate metal layer over the semiconductor substrate and an uppermost metal layer over the intermediate metal layer, and the multilevel wiring structure being divided into a main circuit portion and a scribe portion surrounding the main circuit portion; wherein the scribe portion of the multilevel wiring layer includes at least a metal pad exposed in the intermediate metal layer.


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