The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Nov. 15, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventor:
Alex Usenko, Lake St Louis, MO (US);
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/20 (2006.01); H01L 21/762 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02019 (2013.01); H01L 21/024 (2013.01); H01L 21/02112 (2013.01); H01L 21/02318 (2013.01); H01L 21/02376 (2013.01); H01L 21/02381 (2013.01); H01L 21/02387 (2013.01); H01L 21/2007 (2013.01); H01L 21/76256 (2013.01); H01L 21/30608 (2013.01);
Abstract
Methods of forming SOI substrates are disclosed. In some embodiments, an epitaxial layer and an oxide layer are formed on a sacrificial substrate. An etch stop layer is formed in the epitaxial layer. The sacrificial substrate is bonded to a handle substrate at the oxide layer. The sacrificial substrate is removed. The epitaxial layer is partially removed until the etch stop layer is exposed.