The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

May. 19, 2020
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Chishio Koshimizu, Miyagi, JP;

Shin Hirotsu, Miyagi, JP;

Takenobu Ikeda, Miyagi, JP;

Koichi Nagami, Miyagi, JP;

Shinji Himori, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H05H 1/00 (2006.01); H01H 1/46 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01H 1/46 (2013.01); H01J 37/32568 (2013.01); H01J 37/32715 (2013.01); H05H 1/01 (2021.05);
Abstract

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.


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