The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Dec. 20, 2018
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Todd A. Merritt, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); H03L 7/099 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/32 (2006.01); G11C 7/22 (2006.01); G06F 3/06 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3495 (2013.01); G06F 3/0653 (2013.01); G06F 3/0659 (2013.01); G11C 7/222 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/32 (2013.01); H03L 7/0995 (2013.01);
Abstract

Methods, systems, and devices for degradation signaling for a memory device are described. In one example, a method in accordance with the described techniques may include monitoring, at a memory device, an operational characteristic of the memory device. For example, the threshold voltage of one or more transistors within the memory device may be monitored. The memory device may identify a degradation of the memory device based at least in part on the monitored operational characteristic. Based on identifying the degradation, the memory device may signal, to a host device, an indication of the degradation of the memory device.


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