The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Aug. 09, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Myungnam Lee, Hwaseong-si, KR;

Daehan Kim, Seoul, KR;

Wontaeck Jung, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/28 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3445 (2013.01); G11C 16/16 (2013.01); G11C 16/28 (2013.01); G11C 16/3409 (2013.01);
Abstract

A method of detecting, by a nonvolatile memory system, a defective memory cell block from among memory cell blocks, includes performing, after performing an erase operation, a read operation on at least some memory cells included in a target memory cell block based on an off-cell detection voltage that is different from a read reference voltage that distinguishes an off-cell on which no data is written from an on-cell on which data is written; counting a number of hard off-cells having a higher threshold voltage than the off-cell detection voltage from among the memory cells based on a result of performing the read operation; and identifying whether the target memory cell block is a defective memory cell block based on the number of counted hard off-cells.


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