The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Dec. 23, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jun Jun Wang, Shanghai, CN;

Hua Tan, Shanghai, CN;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 29/44 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3431 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 29/44 (2013.01);
Abstract

Methods, systems, devices, and computer-readable media for performing read disturb management of a memory device. A method includes retrieving a value of a read counter for a block associated with a read request issued to a memory array; refreshing valid word lines in the block if the value of the read counter exceeds a first threshold; identifying a set of valid word lines in the block if the value of the read counter exceeds a second threshold, the second threshold lower than the first threshold; identifying a subset of the set of valid word lines, the subset of the set of valid word lines including word lines having an error rate above a pre-configured error rate threshold; and refreshing the subset of the set of valid word lines.


Find Patent Forward Citations

Quick Actions:

Wang, Jun. (2023). Balanced three-level read disturb management in a memory device (U.S. Patent No. 11763899). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11763899

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