The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

May. 28, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Jialiang Deng, Wuhan, CN;

Zhuqin Duan, Wuhan, CN;

Lei Shi, Wuhan, CN;

Yuesong Pan, Wuhan, CN;

Yanlan Liu, Wuhan, CN;

Bo Li, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/26 (2006.01); G06F 3/06 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 3/0604 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

In certain aspects, a method for operating a memory device is disclosed. The memory device includes a plurality of memory planes. Whether an instruction is an asynchronous multi-plane independent (AMPI) read instruction or a non-AMPI read instruction is determined. In response to the instruction being an AMPI read instruction, an AMPI read control signal is generated based on the AMPI read instruction, and the AMPI read control signal is directed to a corresponding memory plane of the memory planes. In response to the instruction being a non-AMPI read instruction, a non-AMPI read control signal is generated based on the non-AMPI read instruction, and the non-AMPI read control signal is directed to each memory plane of the memory planes.


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