The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Sep. 21, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Baekkyu Choi, San Jose, CA (US);

Thomas H. Kinsley, Boise, ID (US);

Fuad Badrieh, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/4074 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4074 (2013.01); G06F 3/0625 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01);
Abstract

Methods, systems, and devices for feedback for power management of a memory die using shorting are described. A memory device may short a first rail with a voltage source for communicating feedback regarding a supply voltage to a power management component, such as a power management integrated circuit of a memory system. The memory device may detect a condition of one or more voltage rails for delivering power coupled with the array of memory cells. The memory device may short a first rail of the network of components for delivering power with a voltage source based on detecting the condition. In some cases, the memory device may generate a feedback signal across the first rail of the network of components for delivering power based on shorting the first rail.


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