The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Aug. 15, 2022
Applicant:

Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;

Inventors:

Yuyang Bian, Shanghai, CN;

Cong Zhang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70633 (2013.01); G03F 7/70683 (2013.01);
Abstract

The present application provides a method for improving overlay metrology accuracy of self-aligned multiple patterning, overlay metrology pattern comprising a front layer pattern and a current layer pattern, the front layer pattern comprising a plurality of first grating structures overlaid on the periphery of the current layer pattern, the first grating structure being composed of a plurality of repeatedly arranged strip elements; segmenting the strip element in the first grating structure, so that each of the strip elements forms a sub-grating structure comprising a plurality of repeatedly arranged strip structures; forming a plurality of repeatedly arranged core structures corresponding to the plurality of repeatedly arranged strip structures; form a gate structure comprising a plurality of repeatedly arranged fin structures; removing two outermost fin structures of the gate structure; the gate structure and the current layer pattern structure together forming an overlay metrology structure.


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