The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Nov. 05, 2019
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Lior Huli, Albany, NY (US);

Naoki Shibata, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); H01L 21/02 (2006.01); B08B 3/08 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); B08B 3/08 (2013.01); G03F 7/2004 (2013.01); H01L 21/0206 (2013.01); H01L 21/0274 (2013.01);
Abstract

Embodiments provide point-of-use blending of photoresist rinse solutions for patterned photoresists. Disclosed methods and systems form different mitigation solutions for multiple different photoresists through point-of-use variable blending of a mitigation solution with deionized water and/or other chemistries to adjust the formulation of the solution just prior to dispense within a process chamber. For one example embodiment, different surfactant rinse solutions are used for different photoresists, such as different extreme ultraviolet photoresists. In addition, the level of reactive components, the level of nonreactive components, or both within a mitigation solution can be adjusted using this point-of-use blending to provide an adjusted mitigation solution. The ability to make point-of-use adjustments to the solution chemistry just before dispense on a microelectronic workpiece, such as a semiconductor wafer, improves interactions between the adjusted mitigation solution and the patterned photoresist.


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