The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Nov. 25, 2019
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventor:
Yohei Fujikawa, Hikone, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/06 (2006.01); C30B 35/00 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 23/066 (2013.01); C30B 29/36 (2013.01); C30B 35/002 (2013.01);
Abstract
In a method of producing a SiC single crystal ingot of the present invention, in a lower part of a crucible, a high thermal conductivity raw material layer containing a high thermal conductivity raw material and a low thermal conductivity raw material layer containing a low thermal conductivity raw material in at least one of a position above or below the high thermal conductivity raw material layer are disposed to form a raw material part, and heating is performed so that the raw material part reaches the maximum temperature in the high thermal conductivity raw material layer and a SiC single crystal ingot is grown.