The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Dec. 07, 2021
Winbond Electronics Corp., Taichung, TW;
Bo-Lun Wu, Taichung, TW;
Po-Yen Hsu, Taichung, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
Provided is a method of manufacturing a resistive random access memory (RRAM) including: forming a lower electrode protruding from a top surface of a dielectric layer; conformally forming a data storage layer on the lower electrode and the dielectric layer; forming an oxygen reservoir material layer on the data storage layer; forming an opening in the oxygen reservoir material layer to expose the data storage layer on the lower electrode; forming an isolation structure in the opening, wherein the isolation structure divides the oxygen reservoir material layer into a first oxygen reservoir layer and a second oxygen reservoir layer; and forming an upper electrode on the first and second oxygen reservoir layers, wherein the first and second oxygen reservoir layers share the upper electrode.