The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Sep. 03, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Ahmed Nayaz Noemaun, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H10B 53/20 (2023.01); H10B 53/30 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/845 (2023.02); H10B 53/20 (2023.02); H10B 53/30 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/245 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/882 (2023.02);
Abstract

Methods, systems, and devices for dimension control for raised lines are described. For example, the techniques described herein may be used to fabricate raised lines (e.g., orthogonal raised lines). The lines may be fabricated such that an overall area of each line is consistent. In some examples, the techniques may be applied to form memory cells across multiple memory tiles, multiple memory arrays, and/or multiple wafers such that each memory cell comprises a consistent overall area. To form the lines and/or memory cells, a material associated with a desired properties may be deposited after performing a first cut. Due to the properties associated with the material, a width of the second cut may be affected, thus resulting in more uniform lines and/memory cells.


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