The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Aug. 17, 2021
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Yi-Wang Jhan, Taichung, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Fu-Che Lee, Taichung, TW;
Chien-Cheng Tsai, Kaohsiung, TW;
An-Chi Liu, Tainan, TW;
Ming-Feng Kuo, Tainan, TW;
Gang-Yi Lin, Taitung County, TW;
Junyi Zheng, Shamen, CN;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
A memory device includes a first electrode, a first support layer, a dielectric layer and a second electrode. The first electrode is disposed on a substrate and extending upwards. The first support layer laterally supports an upper portion of a sidewall of the first electrode, where the first support layer has a slim portion. The dielectric layer is disposed on the first electrode and the first support layer. The second electrode is disposed on the dielectric layer. In addition, a method of fabricating the memory device is provided.