The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Apr. 13, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jaejoon Oh, Seongnam-si, KR;
Jongseob Kim, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/10 (2013.01); H01L 29/42312 (2013.01); H01L 29/452 (2013.01); H01L 29/475 (2013.01); H01L 29/66462 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01);
Abstract
Provided are a high electron mobility transistor and a method of manufacturing the high electron mobility transistor. The high electron mobility transistor includes a gate electrode provided on a depletion forming layer. The gate electrode includes a first gate electrode configured to form an ohmic contact with the depletion forming layer, and a second gate electrode configured to form a Schottky contact with the depletion forming layer.