The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Jul. 08, 2021
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Inventors:

Yasuharu Hosaka, Tochigi, JP;

Toshimitsu Obonai, Tochigi, JP;

Yukinori Shima, Gunma, JP;

Masami Jintyou, Tochigi, JP;

Daisuke Kurosaki, Tochigi, JP;

Takashi Hamochi, Tochigi, JP;

Junichi Koezuka, Tochigi, JP;

Kenichi Okazaki, Tochigi, JP;

Shunpei Yamazaki, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/24 (2006.01); H01L 29/778 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); C03C 17/245 (2006.01); C04B 35/01 (2006.01); C04B 35/453 (2006.01); C04B 35/622 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); C03C 17/245 (2013.01); C04B 35/01 (2013.01); C04B 35/453 (2013.01); C04B 35/62218 (2013.01); C23C 14/08 (2013.01); C23C 14/5853 (2013.01); H01L 27/1225 (2013.01); H01L 29/7782 (2013.01); H01L 29/7786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01); C03C 2217/23 (2013.01); C03C 2218/151 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3286 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/787 (2013.01); C04B 2235/96 (2013.01);
Abstract

A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.


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