The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Oct. 20, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Ka-Hing Fung, Zhudong Township, Hsinchu County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/823431 (2013.01); H01L 29/41791 (2013.01); H01L 29/6656 (2013.01); H01L 29/66803 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a plurality of nanostructures vertically stacked and separated from one another. The semiconductor structure also includes a gate stack wrapping around the plurality of nanostructures. The semiconductor structure also includes a source/drain feature adjacent to the plurality of nanostructures. The semiconductor structure also includes a semiconductor inner spacer layer interposing between the gate stack and the source/drain feature and interposing between the plurality of nanostructures and the source/drain feature.


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