The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Apr. 15, 2021
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01F 27/28 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5227 (2013.01); H01F 27/2804 (2013.01); H01L 23/5226 (2013.01); H01L 24/48 (2013.01); H01L 2224/48137 (2013.01);
Abstract
A semiconductor device includes: a first substrate; a multilayer wiring layer formed on the first substrate; a first inductor formed into a meander shape on the multilayer wiring layer in a plan view; and a second inductor formed into a meander shape on the multilayer wiring layer in a plain view, and arranged so as to be close to the first inductor in a plan view and not to overlap with the first inductor. A transformer is configured by the first inductor and the second inductor and, in a plan view, the first inductor and the second inductor extend along a first direction in which one side of the first substrate extends.