The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Nov. 09, 2021
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Wenyin Weng, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application provides a method for improving the metal work function boundary effect in FinFET process, the method comprises steps of: depositing a first TiN layer on four fin structures. The first TiN layer has no gap between the second and the third fin structures; removing the first TiN layer up to a first distance from the midline between the second and third fin structures at the second fin structure side; depositing a second TiN layer; removing the second and first TiN layers from second fin structure. The thickness of the TiN layer at the bottom edge of the fin structure at the later structure of the ultra-low threshold voltage P-type transistor will be smaller from this process. Thus formed TiN layer is less prone to a bottom undercut during etching, thereby reducing the metal boundary effect and increasing of the threshold voltage of the device.