The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Jun. 19, 2020
Applicant:
Hitachi High-tech Corporation, Tokyo, JP;
Inventors:
Yohei Ishii, Hillsboro, OR (US);
Kathryn Maier, Hillsboro, OR (US);
Medhat Khalil, Hillsboro, OR (US);
Assignee:
HITACHI HIGH-TECH CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30621 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/32136 (2013.01); H01L 21/32138 (2013.01); B81C 2201/0136 (2013.01); H01L 21/308 (2013.01);
Abstract
A semiconductor device manufacturing method includes the steps of etching a semiconductor material by using plasma, forming a damage layer on the semiconductor material, and removing the damage layer such that a relatively low temperature process can form a fine pattern with a vertical cross section using a compound semiconductor material or the like.