logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11756792 B1

PDFFull Text
Date of Patent:
Sep. 12, 2023

Filed:

Jun. 12, 2020

Apparatus having integrated circuit well structures of vertical and/or retrograde profiles

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Michael Violette, Boise, ID (US);

Vladimir Mikhalev, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Dicke, Billig & Czaja, PLLC

Primary Examiner:

Thanh T Nguyen

Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/265 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/027 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 29/1095 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); H01L 21/0274 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract

Transistors having a control gate isolated from a first region of semiconductor material having a first conductivity type, first and second source/drain regions having a second conductivity type different than the first conductivity type and formed in the first region of semiconductor material, and a second region of semiconductor material having the first conductivity type in contact with the first region of semiconductor material, wherein the first region of semiconductor material is between the control gate and the second region of semiconductor material, wherein the first region of semiconductor material has a first width, and wherein the second region of semiconductor material has a second width, less than or equal to the first width, as well as memory containing such transistors.

Find Patent Forward Citations

Loading…