The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Aug. 12, 2021
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Liang Li, Shanghai, CN;

Qianqian Yu, Shanghai, CN;

Jiahui Yuan, Fremont, CA (US);

Loc Tu, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

Apparatuses and techniques are described for obtaining a threshold voltage distribution for a set of memory cells based on a user read mode. The user read mode can be based on various factors including a coding of a page and an increasing or decreasing order of the read voltages. The read process for the Vth distribution is made to mimic the read mode which is used when the memory device is in the hands of the end user. This results in a Vth distribution which reflects the user's experience to facilitate troubleshooting. In some cases, one or more dummy read operations are performed, where the read result is discarded, prior to a read operation which is used to build the Vth distribution.


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