The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Dec. 28, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Umberto Di Vincenzo, Capriate San Gervasio, IT;

Michele Maria Venturini, Milan, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 16/28 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2273 (2013.01); G11C 11/221 (2013.01); G11C 16/0483 (2013.01); G11C 16/28 (2013.01);
Abstract

Methods, systems, and devices for sensing component with a common node are described. A set of sense circuits of a memory device may include a shared differential amplifier having a first branch for each sense circuit and a shared second branch, as well as a shared common node. A respective latch of each sense amplifier may be initialized to a second logic state, and the common node may undergo a voltage ramp to determine the state stored in the memory cell. If the memory cell stores the first logic state, the sense amplifier may couple with the common node to draw the current and switch the state of the latch to the first logic state. Alternatively, if the memory cell stores the second logic state the current may not be drawn and the state of the latch may not switch.


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