The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Apr. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Wei-Jhih Wang, Hsinchu, TW;

Chia Wei Huang, Hsinchu, TW;

Chia-Chia Kan, Taipei, TW;

Yuan-Yao Chang, Kaohsiung County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); H01L 27/088 (2006.01); G01R 19/165 (2006.01); H01L 23/528 (2006.01); G01R 19/10 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
G01R 31/2601 (2013.01); G01R 19/10 (2013.01); G01R 19/165 (2013.01); H01L 23/5286 (2013.01); H01L 27/0886 (2013.01); H10B 10/12 (2023.02);
Abstract

The present disclosure provides a method of analyzing a semiconductor device. The method includes providing a first transistor, a second transistor disposed adjacent to the first transistor, and a gate electrode common to the first transistor and the second transistor; connecting a power-supply voltage (V) to the gate electrode to turn on the first transistor, determining a first threshold voltage (V) based on the power-supply voltage; switching the power-supply voltage to a ground voltage (V); connecting the ground voltage to the gate electrode to turn on the second transistor; and determining a second threshold voltage based on the ground voltage.


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