The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Jan. 21, 2021
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Erh-Kun Lai, Tarrytown, NY (US);

Hsiang-Lan Lung, Ardsley, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/77 (2017.01); H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/82 (2023.02); G11C 13/0004 (2013.01); H10B 63/84 (2023.02); H10N 70/231 (2023.02); G11C 2213/71 (2013.01);
Abstract

A plurality of memory cells in a cross-point array in which the memory cell stacks in the cross-points include a switch element, a conductive barrier layer, and a confined cell structure in series, and having sides aligned within the cross-point area of the corresponding cross-point, the confined cell structure including surfactant spacers within the cross-point area having outside surfaces on a pair of opposing sides of the stack, and a body of programmable resistance memory material confined between inside surfaces of the surfactant spacers. The memory cells can be operated as multi-level cells in a 3D array.


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