The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Jul. 27, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chun-Wen Cheng, Hsinchu County, TW;

Chun Yin Tsai, Hsinchu, TW;

Chia-Hua Chu, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04R 17/02 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
H04R 17/02 (2013.01); B81B 3/0021 (2013.01); B81C 1/00158 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/04 (2013.01); H04R 2201/003 (2013.01);
Abstract

A MEMS device and a method of manufacturing the same are provided. A semiconductor device includes a substrate; and a membrane over the substrate and configured to generate charges in response to an acoustic wave, the membrane being in a polygonal shape including vertices. The membrane includes a via pattern having first lines that partition the membrane into slices and extend to the vertices of the membrane such that the slices are separated from each other near an anchored region of the membrane and connected to each other around a central region. The via pattern further includes second lines extending from the anchored region of the membrane toward the central region of the membrane. Each of the second lines includes a length less than a length of each of the first lines.


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