The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2023

Filed:

Jun. 29, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeongil Bang, Suwon-si, KR;

Seungwoo Jang, Suwon-si, KR;

Hyosik Mun, Hwaseong-si, KR;

Younggeun Park, Suwon-si, KR;

Jooho Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 49/02 (2006.01); H10B 53/30 (2023.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 28/56 (2013.01); H10B 53/30 (2023.02); H01L 21/02197 (2013.01); H01L 21/02266 (2013.01);
Abstract

A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.


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