The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2023
Filed:
Aug. 27, 2021
Qualcomm Incorporated, San Diego, CA (US);
Khaja Ahmad Shaik, Douglas, IE;
Bharani Chava, Cork City, IE;
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
An exemplary memory bit cell circuit, including a bit line coupled to an SRAM bit cell circuit and an NVM bit cell circuit, with reduced area and reduced power consumption, included in a memory bit cell array circuit, is disclosed. The SRAM bit cell circuit includes cross-coupled true and complement inverters and a first access circuit coupled to the bit line. The NVM bit cell circuit includes an NVM device coupled to the bit line by a second access circuit and is coupled to the SRAM bit cell circuit. Data stored in the SRAM bit cell circuit and the NVM bit cell circuit are accessed based on voltages on the bit line. A true SRAM data is determined by an SRAM read voltage on the bit line, and an NVM data in the NVM bit cell circuit is determined by a first NVM read voltage on the bit line.