The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

May. 11, 2021
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jongjun Baek, Yongin-si, KR;

Jaewoo Jeong, Yongin-si, KR;

Byungsoo So, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 59/121 (2023.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01); H10K 50/12 (2023.01); H10K 50/165 (2023.01); H10K 59/123 (2023.01); H10K 71/00 (2023.01);
U.S. Cl.
CPC ...
H10K 59/1213 (2023.02); H01L 29/045 (2013.01); H01L 29/1604 (2013.01); H01L 29/78675 (2013.01); H10K 50/12 (2023.02); H10K 50/165 (2023.02); H10K 59/123 (2023.02); H10K 71/00 (2023.02);
Abstract

A display apparatus includes a substrate, a first thin film transistor on the substrate, the first thin film transistor including an active layer including a source region, a drain region, and a channel region between the source region and the drain region, and a display device on the substrate and electrically connected to the first thin film transistor. The source region, the drain region, and the channel region include a first dopant and a second dopant, the second dopant being different from the first dopant. A concentration of the first dopant in the channel region is less than a concentration of the first dopant in the source region and the drain region.


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