The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Jan. 26, 2022
Applicant:

Nxp Usa, Inc., Austin, TX (US);

Inventor:

Pierre Philippe Calmes, Toulouse, FR;

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02P 29/02 (2016.01); H02P 27/08 (2006.01); H02P 29/024 (2016.01); G01K 7/00 (2006.01); G01R 19/165 (2006.01);
U.S. Cl.
CPC ...
H02P 29/027 (2013.01); G01K 7/00 (2013.01); G01R 19/16571 (2013.01); G01K 2219/00 (2013.01);
Abstract

The internal temperate of a transistor is determined by detecting a voltage though a terminal of an integrated circuit that is also used by an overcurrent detection circuit of the integrated circuit for detecting an overcurrent condition of the system. The overcurrent detection circuit is coupled to a current electrode of the transistor through the terminal of the integrated circuit. A determination of internal temperature is based on a voltage measurement taken from the terminal during an on phase of the transistor. The voltage measurement is converted to a digital value and is used to determine an internal temperature of the transistor.


Find Patent Forward Citations

Calmes, Pierre. (2023). Temperature detection of a transistor (U.S. Patent No. 11742790). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11742790

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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