The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Jan. 02, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Yong-Sheng Huang, Taipei, TW;
Ming-Chyi Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7926 (2013.01); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/40114 (2019.08); H01L 29/42344 (2013.01); H01L 29/66666 (2013.01); H01L 29/66833 (2013.01);
Abstract
A device includes an active region, a select gate, a control gate, a first metal alloy layer, and a second metal alloy layer. The active region has a source region and a drain region. The select gate is over the active region and between the source region and the drain region. The control gate is over the active region and between the source region and the select gate. The first metal alloy layer is in contact with the source region. The second metal alloy layer is in contact with the drain region and higher than a top surface of the control gate.