The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Feb. 22, 2022
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Haiyang Zhang, Shanghai, CN;

Bo Su, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/3065 (2013.01); H01L 21/32137 (2013.01); H01L 29/66795 (2013.01);
Abstract

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, having a plurality of fins on a surface of the substrate; a gate structure across the plurality of fins. The gate structure is located on a portion of a top surface and sidewall surfaces of the plurality of fins. The gate structure includes a first region and a second region on the first region. A bottom boundary of the second region is higher than the top surface of the plurality of fins. A size of the first region in an extending direction of the plurality of fins is smaller than a size of the second region in the extending direction of the plurality of fins.


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