The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Aug. 20, 2020
Southeast University, Jiangsu, CN;
Csmc Technologies Fab2 Co., Ltd., Jiangsu, CN;
Jing Zhu, Jiangsu, CN;
Guichuang Zhu, Jiangsu, CN;
Nailong He, Jiangsu, CN;
Sen Zhang, Jiangsu, CN;
Shaohong Li, Jiangsu, CN;
Weifeng Sun, Jiangsu, CN;
Longxing Shi, Jiangsu, CN;
SOUTHEAST UNIVERSITY, Jiangsu, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Jiangsu, CN;
Abstract
A laterally double-diffused metal oxide semiconductor device is provided, including: a drift region () having a first conductivity type; a first body region () disposed on the drift region () and having a second conductivity type, the first conductivity type and the second conductivity type being opposite conductivity types; a first conductivity type region () disposed in the first body region (); a second body region () disposed in the first conductivity type region () and having the second conductivity type; a source region () disposed in the second body region () and having the first conductivity type; and a contact region () disposed in the first body region () and having the second conductivity type.