The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Oct. 07, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Nan Wang, Shanghai, CN;
Abstract
A semiconductor device is provided. The semiconductor device includes a base substrate; a gate structure on the base substrate; source/drain doped layers in the base substrate on sides of the gate structure; a first dielectric layer on the base substrate and covering the source/drain doped layers; a mask layer on a top of the gate structure between the source/drain doped layers; a second dielectric layer on the first dielectric layer and exposing a surface of the mask layer; first grooves in the second dielectric layer and the first dielectric layer, and exposing the source/drain doped layers; a first conductive structure in each first groove; a second groove in the mask layer, and exposing the gate structure at a bottom of the second groove; and a spacer on sidewalls of the second groove.