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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11742391 B1

PDFFull Text
Date of Patent:
Aug. 29, 2023

Filed:

Feb. 01, 2021

Semiconductor component having a diode structure in a sic semiconductor body

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Thomas Basler, Chemnitz, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Ralf Siemieniec, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Daniel P Shook

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/167 (2006.01); H01L 29/32 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/0603 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/0878 (2013.01); H01L 29/167 (2013.01); H01L 29/32 (2013.01); H01L 29/66068 (2013.01); H01L 29/7805 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 29/41766 (2013.01);
Abstract

A semiconductor component includes a semiconductor component, including: a merged PiN Schottky (MPS) diode structure in a SiC semiconductor body having a drift zone of a first conductivity type; an injection region of a second conductivity type adjoining a first surface of the SiC semiconductor body; a contact structure at the first surface, the contact structure forming a Schottky contact with the drift zone and electrically contacting the injection region; and a zone of the first conductivity type formed between the injection region and a second surface of the SiC semiconductor body, the second surface being situated opposite the first surface. The zone is at a maximal distance of 1 μm from the injection region of the second conductivity type.

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