The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
Aug. 18, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Poren Tang, Beijing, CN;
Abstract
Semiconductor devices fabrication method is provided. The method for fabricating the semiconductor device includes: providing a semiconductor substrate; forming a gate structure on a surface of the semiconductor substrate; forming protective sidewall spacers on sidewall surfaces of the gate structure and to cover sidewall surfaces of the gate dielectric layer; forming sacrificial sidewall spacers on sidewall surfaces of the protective sidewall spacers and between the protective sidewall spacers and the gate structure; forming a first dielectric layer on the surface of the semiconductor substrate around the gate structure, the protective sidewall spacers and the sacrificial sidewall spacers; forming conductive plugs in the first dielectric layer at opposite sides of the gate structure, the protective sidewall spacers and the sacrificial sidewall spacers; and removing the sacrificial sidewall spacers to form air gap spacers between the protective sidewall spacers and the conductive plugs.