The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Mar. 02, 2021
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Risako Matsuda, Miyagi, JP;

Shinobu Kinoshita, Miyagi, JP;

Manabu Oie, Miyagi, JP;

Keita Shouji, Miyagi, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67253 (2013.01); H01L 21/0262 (2013.01); H01L 21/3065 (2013.01); H01L 22/10 (2013.01);
Abstract

A substrate processing method of processing a substrate using a gas supplied to a chamber includes: (a) setting a threshold value of a pressure of the gas, which is a control target in a flow rate controller configured to measure the pressure of the gas supplied to the chamber and control a flow rate of the gas; (b) supplying the gas into the chamber; (c) measuring the pressure of the gas by the flow rate controller; (d) stopping the supply of the gas into of the chamber; (e) calculating a time when the pressure of the gas measured in (c) becomes equal to or higher than the threshold value; and (f) calculating a total flow rate of the gas supplied into the chamber based on the pressure of the gas measured in (c) and the time calculated in (e).


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