The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Mar. 24, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kiyotake Sakurai, Hino, JP;

Yasushi Matsubara, Isehara, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/2275 (2013.01); G11C 11/221 (2013.01); G11C 11/2257 (2013.01); G11C 11/2259 (2013.01);
Abstract

Methods and apparatuses for erasing data on a plurality of ferroelectric memory cells in a memory cell array in a memory apparatus are disclosed. An example apparatus includes: a memory cell array including a first plurality of word lines; a digit line; and a plurality of ferroelectric memory cells; a control circuit that provides a section select signal and a word line select signal to select a second plurality of word lines among the first plurality of word lines responsive to an address; and an address decoder that activates the second plurality of word lines. Each ferroelectric memory cell includes: a ferroelectric capacitor having a first terminal coupled to a cell plate node and a second terminal coupled to a selection circuit that couples the digit line to the second terminal responsive to a signal on a corresponding word line of the second plurality of word lines.


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