The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Jul. 28, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Kevin T. Majerus, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/00 (2006.01); G06F 3/06 (2006.01); G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0634 (2013.01); G06F 3/061 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G11C 11/221 (2013.01); G11C 11/2257 (2013.01); G11C 11/2273 (2013.01);
Abstract

Methods, systems, and devices for quick activate for memory sensing are described. An operating mode that is associated with a command sequence having a reduced duration relative to another operating mode may be configured at a memory device. The operating mode may be configured based on determining that a testing procedure does not attempt to preserve or is independent of preserving a logic state of accessed memory cells, among other conditions. While operating in the mode, the memory device may perform a received activate command using a first set of operations having a first duration—rather than a second set of operations having a second set of operations having a second, longer duration—to perform the received activate command. The first set of operations may also use less current or introduce less disturbance into the memory device relative to the second set of operations.


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