The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Feb. 08, 2021
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventor:

Kuan-Yuan Shen, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 8/14 (2006.01); H10B 43/10 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 8/14 (2013.01); H10B 43/10 (2023.02);
Abstract

A vertical memory structure comprises a stack of alternating layers of insulator material and word line material with a vertical opening through the alternating layers. One of the layers of insulating material and layers of word line material have recessed inside surfaces facing the opening. First and second conductive pillars are disposed inside the vertical opening. A data storage structure is disposed on the inside surfaces of the layers of word line material, including on the recessed inside surfaces. A semiconductor channel layer is disposed on the data storage structures around a perimeter of the vertical opening, and having first and second source/drain terminals at contacts with the first and second conductive pillars.


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