The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Jan. 28, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventor:

Jin Yong Oh, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 16/04 (2006.01); G11C 8/12 (2006.01); H10B 41/20 (2023.01); G11C 16/28 (2006.01); H10B 41/35 (2023.01); H10B 43/20 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 8/12 (2013.01); G11C 16/0483 (2013.01); G11C 16/28 (2013.01); H10B 41/20 (2023.02); H10B 41/35 (2023.02); H10B 43/20 (2023.02); H10B 43/27 (2023.02);
Abstract

A non-volatile memory device includes a substrate, a plurality of memory blocks grouped into pages, each including an alternating layer stack on the substrate, a plurality of channel holes in the alternating layer stack, and strings of memory cells disposed along the plurality of channel holes, and at least one dummy block adjacent to the plurality of memory blocks, each including an alternating dummy layer stack having multiple conductive layers and multiple dielectric layers alternately laminated on one another on the substrate, the at least one dummy block is disposed at an outskirt of each of the pages of the plurality of memory blocks.


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