The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Mar. 29, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Aaron Michael Lowe, Meridian, ID (US);

Zhuo Chen, Boise, ID (US);

Marko Milojevic, Boise, ID (US);

Timothy A. Quick, Boise, ID (US);

Richard J. Hill, Boise, ID (US);

Scott E. Sills, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/13 (2006.01); H01L 27/12 (2006.01); H10B 53/20 (2023.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 27/1203 (2013.01); H01L 27/13 (2013.01); H10B 12/05 (2023.02); H10B 12/31 (2023.02); H10B 53/20 (2023.02);
Abstract

Some embodiments include an integrated transistor having an active region comprising semiconductor material. A conductive gating structure is adjacent to the active region. The conductive gating structure includes an inner region proximate the active region and includes an outer region distal from the active region. The inner region includes a first material containing titanium and nitrogen, and the outer region includes a metal-containing second material. The second material has a higher conductivity than the first material. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.


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