The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2023

Filed:

Apr. 29, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Yueh-Chuan Lee, Hsinchu, TW;

Chia-Chan Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 21/0257 (2013.01); H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14689 (2013.01); H01L 29/0638 (2013.01);
Abstract

The present disclosure relates to an integrated chip. The integrated chip includes a photodetector region provided in a substrate. A dielectric material is disposed within a trench defined by one or more interior surfaces of the substrate. The trench has a depth that extends from an upper surface of the substrate to within the substrate. A doped silicon material is disposed within the trench and has a sidewall facing away from the doped silicon material. The sidewall contacts a sidewall of the dielectric material along an interface extending along the depth of the trench.


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