The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Dec. 20, 2019
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/288 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/288 (2013.01); H01L 21/2885 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/6836 (2013.01); H01L 21/76873 (2013.01); H01L 21/76874 (2013.01); H01L 21/76879 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 28/10 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/32225 (2013.01); H01L 2924/19011 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01);
Abstract
A method for making an integrated passive device (IPD) die includes grinding a backside of a semiconductor substrate to reduce a thickness of a central portion of the semiconductor substrate while leaving a mechanical support ring on an outer portion of the substrate, and forming a through-substrate via (TSV) from the backside of the substrate. The TSV defines interconnect access to at least one passive component embedded in an insulator material disposed on a front surface of the semiconductor substrate. The substrate has a thickness less than three-quarters of an original thickness of the substrate.